RMPA61800 Datasheet, PDF (1/7 Pages) Raytheon Company – Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC

Description
Features
RMPA61800
Dual Channel 6-18 GHz 2 Watt Power
Amplifier MMIC
PRELIMINARY INFORMATION
The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz
frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT)
process to maximize efficiency and output power. The chip configuration incorporates two stages of reactively
combined amplifiers at the output preceded by an input amplifier stage. Two identical amplifier channels are
provided to achieve a typical total combined (using an off-chip combiner) output power of 33 dBm at 3 dB gain
compression. A single channel provides typically, 18 dB small signal gain and 31 dBm output power at 1 dB gain
compression.
Two Identical Channels
21.0 dB Typical Small Signal Gain, Single Channel
2.0:1 Typical Input SWR, 2.5:1 Typical Output SWR, Single Channel
31 dBm Output Power at 1 dB Gain Compression, Single Channel
32 dBm Output Power at 3 dB Gain Compression, Single Channel
34 dBm Output Power at 1 dB Gain Compression, Dual Channel
22% Typical Power Added Efficiency at 1 dB Gain Compression
Chip size: 6.55 mm x 5.15 mm x 0.1 mm
(Photo TBS)
Absolute
Maximum
Ratings
(Single Channel)
Parameter
Positive Drain DC Voltage
Negative DC Voltage
Simultaneous (Vd-Vg)
RF CW Input Power (50 Ω source)
Drain Current
Storage Temperature
Operating Base Plate Temp
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
Pin
Id
Tstg
Tc
Rjc
Value
8.5
-2
+10.5
27
1.2
-55 to +125
-40 to +85
12
Unit
V
V
V
dBm
A
°C
°C
°C/W
Performance
Characteristics
(at 25°C)
50 Ω system,
Vd=+8V, Quiescent
Current (Idq=600 mA)
Parameter
Min
Frequency Range
6.0
Small Signal Gain
15
P1dB Compression
28
P3dB Compression
30
PAE at 1 dB Gain Comp. 12
Typ Max Unit
18.0 GHz
21
dB
31
dBm
32
dBm
22
%
Note: Quiescent Bias VD = +8V, ID = 600mA/channel, T_C = +25°C.
Parameter
Input Return Loss
Output Return Loss
Gate Voltage (Vg)¹
Gain vs. Temp. 0~85°C
Min Typ Max Unit
9.5
7.4
-0.4
-0.025
dB
dB
V
dB/°C
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
Revised January 25, 2002
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810