RMPA1951-102 Datasheet, PDF (1/17 Pages) Raytheon Company – 3V PCS CDMA Power Amplifier Module

RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Description
The RMPA1951-102 is a small-outline, power amplifier module (PAM) for CDMA Personal Communication System
(PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective
means to reduce current consumption during peak phone usage at backed-off RF power levels. Analog or digital
bias control enables the handset designer to optimize gain, linearity and power-added efficiency over a wide range
of output powers, depending on the power-density profile of the wireless network. High power-added efficiency and
excellent linearity are achieved using Raytheon’s Heterojunction Bipolar Transistor (HBT) process.
Features
K Advanced DC power-management extends average phone-battery life!
K Single positive-supply operation and power-down mode.
K 35% power-added efficiency at +29 dBm CDMA average output power.
K Compact LCC package: 6.0 x 6.0 x 1.5 mm³.
K 50 ohm matched and DC blocked input/output.
Absolute
Maximum
Ratings¹
Parameter
Supply Voltage
Reference Voltage
RF Input Power²
Load VSWR
Case Operating Temperature
Storage Temperature
Symbol Min
Vcc
Vref
1.5
P_in
V_SWR
T_c
-40
T_stg
-55
Typical
3.5
2.7
+1
1.2:1
+25
+25
Max
6
4.0
+7
10:1
+110
+150
Units
V
V
dBm
°C
°C
Electrical _Parameter
Characteristics³ _{Operating Frequency}
Min Typ Max Unit
1850
1910 MHz
Parameter
Stability (All spurious)⁵
Min Typ Max Unit
-70 dBc
Gain
Harmonics (Po ≤ 29 dBm)
(Po=0 dBm)
20
24
dB
2fo, 3fo, 4fo
-30 dBc
(Po=28 dBm)
25
27
dB
Quiescent Current
Linear Output Power
29
dBm
(Vref=2.7V)
80 100 mA
Power-Added Efficiency
(Po=16 dBm)
5
6.5
(Vref=2.0V)
%
(Vref=1.7V)
50
mA
35
mA
(Po=28 dBm)
28
32
%
Power Shutdown Current⁶
2
10 uA
(Po=29 dBm)
31
35
%
Vcc
3.0 3.5 4.5 V
ACPR (Offset ≥ 1.25 MHz)⁴
-49 -46 dBc
Vref
1.7 2.7 3.2 V
Noise Figure
5
6 dB
Iref
13
mA
Noise Power (Po ≤ 29 dBm)
-135 dBm/Hz _{Case Operating}
Input VSWR (50Ω)
2.0:1 2.5:1
Temperature
-30
+85 °C
Output VSWR (50Ω)
3.5:1
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Notes:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
2. Typical RF input power for CDMA Pout = +28 dBm.
3. All parameters met at Tc =+25°C, Vcc =+3.5V, Vref=+2.7V, f=1880 MHz and load VSWR ≤ 1.2:1.
4. Po ≤ 28 dBm at Vcc=3.5V; CDMA Waveform measured using the ratio of average power within a
1.23 MHz channel to average power within a 30 kHz bandwidth at + 1.25 MHz offset.
5. Load VSWR ≤ 6:1, all phase angles.
6. No applied RF signal. Vcc=+3.5V nominal, Vref=+0.2V maximum.
Characteristic performance data and specifications are subject to change without notice.
Revised August 27, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810