RMDA25000 Datasheet, PDF (1/6 Pages) Raytheon Company – 23-28 GHz Driver Amplifier MMIC

RMDA25000
23-28 GHz Driver Amplifier MMIC
Description
Features
ADVANCED INFORMATION
The Raytheon RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to
multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3-stage GaAs
MMIC amplifier utilizing Raytheon’s advanced 0.15µm gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
32 dB small signal gain (typ.)
21 dBm saturated power out (typ.)
Circuit contains individual source Vias
Chip Size 2.79 mm x 1.63 mm
Absolute
Maximum
Ratings
Electrical
Characteristics
(At 25°C)
50 Ω system, Vd=+5 V,
Quiescent current
(Idq)=250 mA
Parameter
Positive DC Voltage (+5 V Typical)
Negative DC Voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Base plate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
I_D
P_IN
T_C
T_Stg
R_jc
Value
+6
-2
+8
360
+10
-30 to +85
-55 to +125
44
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Parameter
Min
Frequency Range
23
Gate Supply Voltage¹(Vg)
Gain Small Signal
27
Gain Variation vs.
Frequency
Power Output at 1 dB
Compression
Power Output Saturated:
(Pin=-5 dBm)
Typ Max Unit
28 GHz
-0.4
V
32 36 dB
+/-2
dB
22
dBm
23
dBm
Parameter
Min
Drain Current at
Pin=-5 dBm
Drain Current at
P1 dB Compression
Power Added Efficiency
(PAE): at P1dB
OIP3
Input Return Loss
3
Output Return Loss
7
Typ Max Unit
250
mA
270
mA
10
%
29
dBm
10
dB
8
dB
Application
Information
www.raytheon.com/micro
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to
prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long
corresponding to a typically 2 mils gap between the chip and the substrate material.
Note:
1. Typical range of the negative gate voltages is -0.9 to 0.0V to set typical Idq of 250 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised April 16, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810