RE46C141 Datasheet, PDF (1/12 Pages) Microchip Technology – CMOS Photoelectric Smoke Detector ASIC with Interconnect

R&E International
RE46C141
CMOS Photoelectric Smoke Detector ASIC with Interconnect
Product Specification
General Description
The RE46C141 is low power CMOS photoelectric type
smoke detector IC. With minimal external components
this circuit will provide all the required features for a
photoelectric type smoke detector.
The design incorporates a gain selectable photo
amplifier for use with an infrared emitter/detector pair.
An internal oscillator strobes power to the smoke
detection circuitry for 100us every 8.1 seconds to keep
standby current to a minimum. If smoke is sensed the
detection rate is increased to verify an alarm condition.
A high gain mode is available for push button chamber
testing.
A check for a low battery condition and chamber
integrity is performed every 32 seconds when in
standby. The temporal horn pattern supports the NFPA
72 emergency evacuation signal.
An interconnect pin allows multiple detectors to be
connected such that when one units alarms, all units
will sound.
Utilizing low power CMOS technology the RE46C141
was designed for use in smoke detectors that comply
with Underwriters Laboratory Specification UL217 and
UL268.
Features
• Internal Power On Reset
• Low Quiescent Current Consumption
• Available in 16L PDIP or 16L N SOIC
• ESD Protection on all Pins
• Interconnect up to 40 Detectors
• Temporal Horn Pattern
• Low Battery and Chamber Test
• Compatible with Motorola MC145012
• Available in Standard Packaging or RoHS
Compliant Pb Free Packaging.
Pin Configuration
C1
1
C2
2
DETECT ₃
STROBE
4
VDD 5
IRED 6
IO ₇
HORNB
8
16 ^TEST
15 ^LBSET
14 ^VSS
13 ^ROSC
12 ^COSC
11 ^LED
10 ^FEED
9 ^HORNS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage
Input Voltage Range Except FEED, IO
FEED Input Voltage Range
IO Input Voltage Range
Input Current except FEED
Operating Temperature
Storage Temperature
Maximum Junction Temperature
SYMBOL
V_DD
V_in
V_infd
V_io1
I_in
T_A
T_STG
T_J
VALUE
12.5
-.3 to V_dd +.3
-10 to +22
-.3 to 17
10
-25 to 75
-55 to 125
150
UNITS
V
V
V
V
mA
°C
°C
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only and operation at these conditions for extended periods may affect device reliability.
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when
handling this product. Damage can occur when exposed to extremely high static electrical charge.
Telephone [phone]
Facsimile 610.992.0734
E-mail: [e-mail]
Page 1 of 12
DS-RE46C141-121806
This datasheet contains PROPRIETARY and CONFIDENTIAL information.