FM1608B Datasheet, PDF (7/11 Pages) Ramtron International Corporation – 64Kb Bytewide 5V F-RAM Memory

FM1608B – 64Kb Bytewide 5V F-RAM
Read Cycle AC Parameters (T_A = -40° C to + 85° C, V_DD = 4.5V to 5.5V unless otherwise specified)
Symbol Parameter
Min Max Units
t_CE
Chip Enable Access Time (to data valid)
t_CA
Chip Enable Active Time
t_RC
Read Cycle Time
t_PC
Precharge Time
t_AS
Address Setup Time
t_AH
Address Hold Time
t_OE
Output Enable Access Time
t_HZ
Chip Enable to Output High-Z
t_OHZ
Output Enable to Output High-Z
70
ns
70
ns
130
ns
60
ns
0
ns
15
ns
12
ns
15
ns
15
ns
Notes
1
1
Write Cycle AC Parameters (T_A = -40° C to + 85° C, V_DD = 4.5V to 5.5V unless otherwise specified)
Symbol Parameter
Min Max Units Notes
t_CA
Chip Enable Active Time
70
ns
t_CW
Chip Enable to Write High
70
ns
t_WC
Write Cycle Time
130
ns
t_PC
Precharge Time
60
ns
t_AS
Address Setup Time
0
ns
t_AH
Address Hold Time
15
ns
t_WP
Write Enable Pulse Width
40
ns
t_DS
Data Setup
30
ns
t_DH
Data Hold
0
ns
t_WZ
Write Enable Low to Output High Z
15
ns
1
t_WX
Write Enable High to Output Driven
10
ns
1
t_HZ
Chip Enable to Output High-Z
15
ns
1
t_WS
Write Enable Setup
0
ns
2
t_WH
Write Enable Hold
0
ns
2
Notes
1 This parameter is periodically sampled and not 100% tested.
2 The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. There is no timing
specification associated with this relationship.
Data Retention
Symbol Parameter
T_DR
@ +85ºC
@ +80ºC
@ +75ºC
Min
Max
Units
Notes
10
-
Years
19
-
Years
38
-
Years
Rev. 1.2
Mar. 2011
Page 7 of 11