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FM1106_09 Datasheet, PDF (5/8 Pages) Ramtron International Corporation – Nonvolatile 3V Dual State Saver
FM1106 - Automotive Temp.
AC Parameters (TA = -40° C to +125° C, VDD = 2.7V to 3.6V, CL = 30 pF unless otherwise specified)
Symbol Parameter
Min
Max
fMAX
Maximum Clock Frequency
tLOW
CLK Low Period
tHIGH
CLK High Period
tPD
Propagation delay CLK to QN
tHZ
EN Low to QN Hi-Z
tR
Input Rise Time
tF
Input Fall Time
tDS
Data (DN) Setup Time to CLK ↑
tDH
Data (DN) Hold Time after CLK ↑
tEHD
EN Hold Time (EN High after CLK ↑)
tEH
EN High Time
tEL
EN Low Time
-
900
0.3
-
0.3
-
-
50
-
25
-
100
-
100
5
-
10
-
50
-
5
-
2
-
Notes
1. This parameter is characterized but not tested.
Units
kHz
µs
µs
ns
ns
ns
ns
ns
ns
ns
µs
µs
Notes
1
1
1
Power Cycling and Data Retention (TA = -40° C to +125° C, VDD = 2.7V to 3.6V, unless otherwise specified)
Symbol Parameter
Min
Max Units Notes
Nonvolatile Data Retention Time
45
-
years
tVDR
tVDF
tRES
tPDS
tEHFC
VDD Rise Time
VDD Fall Time
EN High to QN Restore Time
EN Low to Power Down Time
EN High to First Clock (CLK ↑) after Power Up
25
-
µs/V
1
50
-
µs/V
1
-
0.5
µs
2
1
-
µs
4
-
µs
3
Notes
1. Slope measured at any point on VDD waveform.
2. After power up, when EN goes high the nonvolatile latches are read and the values restored to the outputs QN.
3. After power up, this is the minimum time required before a state change operation may occur. EN and VDD may be
coincident at power up, and in this case tEHFC time is referenced to VDD (min) and CLK ↑.
Data Retention (VDD = 3.0V to 3.6V)
Parameter
Min
Max
Units
Notes
Data Retention
@ TA = 85°C
@ TA = 125°C
45
9000
-
Years
-
Hours
Note : The device is guaranteed to retain data after both conditions have been applied : (1) 45 yrs at a temperature
of 85°C and (2) 9000 hrs at 125°C.
Typical Grade 1 Operating Profile
1600
1400
1200
1000
800
600
400
200
0
70 75 80 85 90 95 100 105 110 115 120 125
Temperature (°C)
Typical Grade 1 Storage Profile
25000
20000
15000
10000
5000
0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
Temperature (°C)
Rev. 3.0
Apr. 2009
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