FM25V01 Datasheet, PDF (1/15 Pages) Ramtron International Corporation – 128Kb Serial 3V F-RAM Memory

Preliminary
FM25V01
128Kb Serial 3V F-RAM Memory
Features
128K bit Ferroelectric Nonvolatile RAM
 Organized as 16,384 x 8 bits
 High Endurance 100 Trillion (10¹⁴) Read/Writes
 10 Year Data Retention
 NoDelay™ Writes
 Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
 Up to 40 MHz Frequency
 Direct Hardware Replacement for Serial Flash
 SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
 Hardware Protection
 Software Protection
Description
The FM25V01 is a 128-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by Serial
Flash and other nonvolatile memories.
Unlike Serial Flash, the FM25V01 performs write
operations at bus speed. No write delays are incurred.
Data is written to the memory array immediately
after it has been transferred to the device. The next
bus cycle may commence without the need for data
polling. The product offers very high write
endurance, orders of magnitude more endurance than
Serial Flash. Also, F-RAM exhibits lower power
consumption than Serial Flash.
These capabilities make the FM25V01 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of Serial Flash can
cause data loss.
The FM25V01 provides substantial benefits to users
of Serial Flash as a hardware drop-in replacement.
The device uses the high-speed SPI bus, which
Device ID
 Device ID reads out Manufacturer ID & Part ID
Low Voltage, Low Power
 Low Voltage Operation 2.0V – 3.6V
 Active Current 120 A (typ. @ 1MHz)
 Standby Current 90 A (typ.)
 Sleep Mode Current 5 A (typ.)
Industry Standard Configurations
 Industrial Temperature -40C to +85C
 8-pin “Green”/RoHS SOIC Package
enhances the high-speed write capability of F-RAM
technology. The device incorporates a read-only
Device ID that allows the host to determine the
manufacturer, product density, and product revision.
The device is guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
S
1
Q
2
W
3
VSS
4
8
VDD
7
HOLD
6
C
5
D
Pin Name
/S
/W
/HOLD
C
D
Q
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.1
Sept. 2011
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, [phone]
http://www.ramtron.com
Page 1 of 15