FM25L16B Datasheet, PDF (1/14 Pages) Ramtron International Corporation – 16Kb Serial 3V F-RAM Memory

Preliminary
FM25L16B
16Kb Serial 3V F-RAM Memory
Features
16K bit Ferroelectric Nonvolatile RAM
• Organized as 2,048 x 8 bits
• High Endurance 100 Trillion (10¹⁴) Read/Writes
• 38 Year Data Retention (@ +75ºC)
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
• Up to 20 MHz Frequency
• Direct Hardware Replacement for EEPROM
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Description
The FM25L16B is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM25L16B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been transferred to the device. The next bus cycle
may commence without the need for data polling.
The FM25L16B is capable of supporting 10¹⁴
read/write cycles, or a million times more write
cycles than EEPROM.
These capabilities make the FM25L16B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25L16B provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25L16B uses the high-speed
SPI bus, which enhances the high-speed write
capability of F-RAM technology. Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Rev. 1.3
Mar. 2011
Sophisticated Write Protection Scheme
• Hardware Protection
• Software Protection
Low Power Consumption
• Low Voltage Operation 2.7-3.6V
• 200 µA Active Current (1 MHz)
• 3 µA (typ.) Standby Current
Industry Standard Configuration
• Industrial Temperature -40°C to +85°C
• 8-pin “Green”/RoHS SOIC and TDFN Packages
Pin Configuration
CS
1
SO
2
WP
3
VSS
4
8
VDD
7
HOLD
6
SCK
5
SI
Top View
/CS 1
SO 2
/WP 3
VSS 4
8 VDD
7 /HOLD
6 SCK
5 SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ordering Information
FM25L16B-G
“Green”/RoHS 8-pin SOIC
FM25L16B-GTR
“Green”/RoHS 8-pin SOIC,
Tape & Reel
FM25L16B-DG
“Green”/RoHS 8-pin TDFN
FM25L16B-DGTR “Green”/RoHS 8-pin TDFN,
Tape & Reel
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-F-RAM, [phone]
www.ramtron.com
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