H11B815 Datasheet, PDF (1/4 Pages) QT Optoelectronics – 4-PIN PHOTODARLINGTON OPTOCOUPLERS

4-PIN PHOTODARLINGTON
OPTOCOUPLERS
DESCRIPTION
The H11B815 consists of a gallium arsenide infrared
emitting diode driving a silicon Darlington phototransistor
in a 4-pin dual in-line package.
4
FEATURES
• Compact 4-pin package
• Current Transfer Ratio: 600% minimum (at I_F = 1 mA)
• High isolation voltage between input and output (5300
VRMS)
• UL recognized (File # E90700)
APPLICATIONS
• Power Supply Monitors
• Relay Contact Monitor
• Telephone/Telegraph Line
Receiver
• Twisted Pair Line Receiver
• Digital Logic/Digital Logic
ANODE 1
CATHODE 2
4 COLLECTOR
3 EMITTER
ABSOLUTE MAXIMUM RATINGS (No derating required up to 85°C)
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T_A = 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1µs pulse, 300pps)
LED Power Dissipation @ T_A = 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation @ T_A = 25°C
Derate above 25°C
Symbol
T_STG
T_OPR
T_SOL
P_D
I_F
V_R
I_F(pk)
P_D
V_CEO
V_ECO
I_C
P_D
H11B815
4
1
1
4
1
Value
-55 to +150
-55 to +100
260 for 10 sec
250
80
6
1
140
1.33
35
6
200
200
2.0
Units
°C
°C
°C
mW
mA
V
A
mW
mW/°C
V
V
mA
mW
mW/°C
1/25/00 200029A