CNX82AW Datasheet, PDF (1/4 Pages) QT Optoelectronics – 6-pin phototransistor optocouplers

6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
DESCRIPTION
The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W,
consist of a gallium arsenide infrared emitting diode driving a
silicon phototransistor in a 6-pin dual in-line package.
PACKAGE DIMENSIONS
FEATURES
• Input/Output pin distance 10.16 mm
• UL recognized (File # E90700)
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
6
1
SCHEMATIC
1
NC
6
1
6
2
5
2
5
3
NC
4
CNX82A.W
SL5582.W
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
3
NC
4
CNX83A.W
SL5583.W
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature
Total Device Power Dissipation @ T_A = 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1µs pulse, 300pps)
LED Power Dissipation @ T_A = 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage (CNX83A)
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation @ T_A = 25°C
Derate above 25°C
0.270 (6.86)
0.240 (6.10)
0.350 (8.89)
0.330 (8.38)
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.115 (2.92)
0.154 (3.90)
0.100 (2.54)
0.022 (0.56)
0.016 (0.41)
0.004 (0.10)
MIN
0.100 (2.54) TYP
0.016 (0.40)
0.008 (0.20)
0° to 15°
0.400 (10.16)
TYP
NOTE
All dimensions are in inches (millimeters)
Symbol
T_STG
T_OPR
T_SOL
T_J
P_D
I_F
V_R
I_F(pk)
P_D
V_CEO
V_CBO
V_ECO
I_C
P_D
Value
Units
-55 to +150
°C
-55 to +100
°C
260 for 10 sec
°C
125
°C
250
mW
100
mA
5.0
V
3.0
A
140
mW
1.33
mW/°C
50
V
70
V
7
V
100
mA
150
mW
2.0
mW/°C
4/13/00 200024D