P4C1681 Datasheet, PDF (4/10 Pages) List of Unclassifed Manufacturers – ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS

P4C1681, P4C1682
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V_CC = 5V ± 10%, All Temperature Ranges)⁽²⁾
Symbol
Parameter
-12
-15
-20
-25
-35
Unit
Min Max Min Max Min Max Min Max Min Max
t_RC
Read Cycle Time
12
15
20
25
35
ns
t_AA
Address Access
Time
12
15
20
25
35 ns
t_AC
Chip Enable
Access Time
12
15
20
25
35 ns
t_OH
Output Hold from
2
2
3
3
3
ns
Address Change
t_LZ
Chip Enable to
2
2
3
3
3
ns
Output in Low Z
t_HZ
Chip Disable to
Output in High Z
6
7
9
10
15 ns
t_RCS
Read Command
0
0
0
0
0
ns
Setup Time
t_RCH
Read Command
0
0
0
0
0
ns
Hold Time
t_PU
Chip Enable to
0
0
0
0
0
ns
Power Up Time
t_PD
Chip Disable to
12
15
20
25
25 ns
Power Down Time
1552 Tbl 10
READ CYCLE NO. 1 (ADDRESS controlled)^{(5, 6)}
READ CYCLE NO. 2 (CE controlled)^{(5, 7)}
Notes:
5. WE is HIGH for READ cycle.
6. CE is LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with, CE
transition LOW.
Document # SRAM109 REV A
8. Transition is measured ±200mV from steady state voltage prior to
change, with loading as specified in Figure 1.
9. Read Cycle Time is measured from the last valid address to the first
transitioning address.
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