PYA28C64 Datasheet, PDF (1/10 Pages) Pyramid Semiconductor Corporation – Access Times of 150, 200, 250 and 350ns Fast Byte Write (200us or 1 ms)

FEATURES
Access Times of 150, 200, 250 and 350ns
Single 5V±10% Power Supply
Fast Byte Write (200µs or 1 ms)
Low Power CMOS:
- 60 mA Active Current
- 150 µA Standby Current
Fast Write Cycle Time
RDY/BUSY pin is not connected for the
PYA28C64X
PYA28C64(X)
8K X 8 EEPROM
CMOS & TTL Compatible Inputs and Outputs
Endurance:
- 10,000 Write Cycles
- 100,000 Write Cycles (optional)
Data Retention: 10 Years
Available in the following package:
– 28-Pin 600 mil Ceramic DIP
– 32-Pin Ceramic LCC (450x550 mils)
DESCRIPTION
The PYA28C64 is a 5 Volt 8Kx8 EEPROM. The PYA28C64
features DATA and RDY/BUSY (PYA28C64 only) to indicate
early completion of a Write Cycle. Data Retention is 10
Years. The device is available in a 28-Pin 600 mil wide
Ceramic DIP and 32-Pin LCC.
PIN CONFIGURATIONS
FUNCTIONAL BLOCK DIAGRAM
DIP (C5-1)
Document # EEPROM105 REV B
LCC (L6)
NOTE: The RDY/BUSY pin is not connected for the PYA28C64X.
Revised June 2012