PYA28C16 Datasheet, PDF (1/10 Pages) Pyramid Semiconductor Corporation – Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply

FEATURES
Access Times of 150, 200, 250 and 350ns
Single 5V±10% Power Supply
Fast Byte Write (200µs or 1 ms)
Low Power CMOS:
- 60 mA Active Current
- 150 µA Standby Current
Fast Write Cycle Time - DATA Polling
CMOS & TTL Compatible Inputs and Outputs
PYA28C16
2K X 8 EEPROM
Endurance:
- 10,000 Write Cycles
- 100,000 Write Cycles (optional)
Data Retention: 10 Years
Available in the following package:
– 24-Pin 600 mil Ceramic DIP
– 32-Pin Ceramic LCC (450x550 mils)
DESCRIPTION
The PYA28C16 is a 5 Volt 2Kx8 EEPROM. The PYA28C16
is a 16K memory organized as 2,048 words by 8 bits. Data
Retention is 10 Years. The device is available in a 24-Pin
600 mil wide Ceramic DIP and 32-Pin LCC.
PIN CONFIGURATIONS
FUNCTIONAL BLOCK DIAGRAM
DIP (C12)
Document # EEPROM108 REV A
LCC (L6)
Revised July 2012