P4C423 Datasheet, PDF (1/8 Pages) Pyramid Semiconductor Corporation – HIGH SPEED 256 x 4 STATIC CMOS RAM

P4C423
HIGH SPEED 256 x 4
STATIC CMOS RAM
FEATURES
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25/35 ns (Commercial)
– 15/20/25/35 ns (Military)
CMOS for Low Power
– 495 mW Max. – 10/12/15/20/25 (Commercial)
– 495 mW Max. – 15/20/25/35 (Military)
Single 5V±10% Power Supply
Separate I/O
Fully TTL Compatible Inputs and Outputs
Resistant to single event upset and latchup
resulting from advanced process and design
improvements
Standard 24-pin 300 mil DIP package.
DESCRIPTION
The P4C423 is a 1,024-bit high-speed (10ns) Static
RAM with a 256 x 4 organization. The memory requires
no clocks or refreshing and has equal access and cycle
times. Inputs and outputs are fully TTL compatible.
Operation is from a single 5 Volt supply. Easy memory
expansion is provided by an active LOW chip select one
(CS₁) and active HIGH chip select two (CS₂) as well as
3-state outputs.
In addition to high performance and high density, the
device features latch-up protection, single event and
upset protection. The P4C423 is offered in a 24-pin 300
mil DIP. Devices are offered in both commercial and
military temperature ranges.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
DIP (C4)
Document # SRAM108 REV OR
Revised October 2005
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