P4C174 Datasheet, PDF (1/12 Pages) Pyramid Semiconductor Corporation – HIGH SPEED 8K x 8 CACHE TAG STATIC RAM

P4C174
HIGH SPEED 8K x 8
CACHE TAG STATIC RAM
FEATURES
High Speed Address-To-Match - 8 ns Maximum
Access Time
High-Speed Read-Access Time
– 8/10/12/15/20/25 ns (Commercial)
– 15/20/25 ns (Military)
Open Drain MATCH Output
Reset Function
8-Bit Tag Comparison Logic
Automatic Powerdown During Long Cycles
DESCRIPTION
The P4C174 is a 65,536 bit high speed cache tag static
RAM organized as 8K x 8. The CMOS memory has equal
access and cycle times. Inputs are fully TTL-compatible.
The cache tag RAMs operate from a single 5V±10%
power supply. An 8-bit data comparator with a MATCH
output is included for use as an address tag comparator
in high speed cache applications. The reset function
provides the capability to reset all memory locations to a
LOW level.
The MATCH output of the P4C174 reflects the compari-
son result between the 8-bit data on the I/O pins and
Data Retention at 2V for Battery Backup
Operation
Advanced CMOS Technology
Low Power Operation
Package Styles Available
— 28 Pin 300 mil DIP
— 28 Pin 300 mil Plastic SOJ
Single Power Supply
— 5V±10%
the addressed memory location. 8K Cache lines can be
mapped into 1M-Byte address spaces by comparing 20
address bits organized as 13-line address bits and 7-
page address bits.
Low power operation of the P4C174 is enhanced by
automatic powerdown when the memory is deselected or
during long cycle times. Also, data retention is main-
tained down to V_CC = 2.0. Typical battery backup appli-
cations consume only 30 µW at V_CC = 3.0V.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
DIP (C5, P5), SOJ (J5)
Document # SRAM118 REV C
Revised August 2006
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