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P4C168 Datasheet, PDF (1/15 Pages) List of Unclassifed Manufacturers – ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS
P4C168, P4C169, P4C170
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 12/15/20/25/35ns (Commercial)
– 20/25/35/45/55/70ns (P4C168 Military)
Low Power Operation (Commercial)
– 715 mW Active
– 193 mW Standby (TTL Input) P4C168
– 83 mW Standby (CMOS Input) P4C168
Single 5V±10% Power Supply
DESCRIPTION
The P4C168, P4C169 and P4C170 are a family of
16,384-bit ultra high-speed static RAMs organized as 4K
x 4. All three devices have common input/output ports.The
P4C168 enters the standby mode when the chip enable
(CE) control goes HIGH; with CMOS input levels, power
consumption is only 83mW in this mode. Both the P4C169
and the P4C170 offer a fast chip select access time that
is only 67% of the address access time. In addition, the
P4C170 includes an output enable (OE) control to elimi-
nate data bus contention. The RAMs operate from a
single 5V ± 10% tolerance power supply.
FUNCTIONAL BLOCK DIAGRAM
Fully TTL Compatible, Common I/O Ports
Three Options
– P4C168 Low Power Standby Mode
– P4C169 Fast Chip Select Control
– P4C170 Fast Chip Select, Output Enable
Controls
Standard Pinout (JEDEC Approved)
– P4C168: 20-pin DIP, SOJ, LCC, SOIC,
CERPACK, and Flat Pack
– P4C169: 20-pin DIP and SOIC
– P4C170: 22-pin DIP
Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby.
The P4C168 and P4C169 are available in 20-pin (P4C170
in 22-pin) 300 mil DIP packages providing excellent
board level densities. The P4C168 is also available in 20-
pin 300 mil SOIC, SOJ, CERPACK, and Flat Pack
packages.
The P4C169 is also available in a 20-pin 300 mil SOIC
package.
PIN CONFIGURATIONS
P4C168
P4C169
DIP (P2, C6, D2) DIP (P2)
SOIC (S2)
SOIC (S2)
SOJ (J2)
CERPACK (F2)
SOLDER SEAL FLAT PACK (FS-2)
P4C170
DIP (P3)
Document # SRAM107 REV A
1
Revised October 2005