P4C148 Datasheet, PDF (1/10 Pages) Pyramid Semiconductor Corporation – ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS

P4C148, P4C149
ULTRA HIGH SPEED 1K x 4
STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25/35/45/55 ns (Commercial)
– 15/20/25/35/45/55 ns (P4C148 Military)
Low Power Operation
Single 5V ± 10% Power Supply
DESCRIPTION
The P4C148 and P4C149 are 4,096-bit ultra high-speed
static RAMs organized as 1K x 4. Both devices have
common input/output ports. The P4C148 enters the
standby mode when the chip enable (CE) goes HIGH;
with CMOS input levels, power consumption is extremely
low in this mode. The P4C149 features a fast chip select
capability using CS. The CMOS memories require no
clocks or refreshing, and have equal access and cycle
times. Inputs are fully TTL-compatible. The RAMs
operate from a single 5V ± 10% tolerance power supply.
FUNCTIONAL BLOCK DIAGRAM
Two Options
– P4C148 Low Power Standby Mode
– P4C149 Fast Chip Select Control
Common Input/Output Ports
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 18 Pin 300 mil DIP
– 18 Pin LCC (295 x 335 mil) [P4C148 only]
– 18 Pin LCC (290 x 430 mil)
Access times as fast as 10 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption when
active; for the P4C148, consumption is further reduced in
the standby mode.
The P4C148 and P4C149 are available in 18-pin 300 mil
DIP packages, as well as 2 different LCC packages,
providing excellent board level densities.
PIN CONFIGURATION
P4C148 DIP (C9, D1, P1)
P4C149 DIP (P1)
P4C148 LCC (L7, L7-1)
P4C149 LCC (L7)
Document # SRAM104 REV B
1
Revised April 2007