P4C1258 Datasheet, PDF (1/9 Pages) Pyramid Semiconductor Corporation – ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM

P4C1258
ULTRA HIGH SPEED 64K x 4
STATIC CMOS RAM
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 15/20/25/35 ns (Commercial/Industrial)
Low Power
Single 5V±10% Power Supply
Data Retention with 2.0V Supply
Three-State Outputs
TTL/CMOS Compatible Outputs
Fully TTL Compatible Inputs
Standard Pinout (JEDEC Approved)
– 24-Pin 300 mil DIP, SOJ
DESCRIPTION
The P4C1258 is a 262,144-bit ultra high speed static RAM
organized as 64K x 4. The CMOS memory requires no clock
or refreshing and has equal access and cycle times. Inputs
and outputs are fully TTL-compatible. The RAM operates
from a single 5V±10% tolerance power supply. With battery
backup, data integrity is maintained for supply voltages
down to 2.0V. Current drain is typically 10 µA from a 2.0V
supply.
Access times as fast as 15 nanoseconds are available,
permitting greatly enhanced system speeds. CMOS is
utilized to reduce power consumption.
The P4C1258 is available in a 24-pin 300 mil DIP or SOJ
packages providing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
DIP (P4)
SOJ (J4)
Document # SRAM123 REV OR
Revised October 2005
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