P4C1024 Datasheet, PDF (1/14 Pages) Pyramid Semiconductor Corporation – HIGH SPEED 128K X 8 CMOS STATIC RAM

P4C1024
HIGH SPEED 128K x 8
DUAL CHIP ENABLE
CMOS STATIC RAM
FEATURES
High Speed (Equal Access and Cycle Times)
— 15/20/25/35 ns (Commercial)
— 20/25/35/45 ns (Industrial)
— 20/25/35/45/55/70/85/100/120 ns (Military)
Single 5 Volts ±10% Power Supply
Easy Memory Expansion Using CE_1, CE₂ and OE
Inputs
Common Data I/O
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
DESCRIPTION
The P4C1024 is a 1,048,576-bit high-speed CMOS
static RAM organized as 128Kx8. The CMOS memory
requires no clocks or refreshing, and has equal access
and cycle times. Inputs are fully TTL-compatible. The
RAM operates from a single 5V±10% tolerance power
supply.
Access times of 15 nanoseconds permit greatly en-
hanced system operating speeds. CMOS is utilized to
reduce power consumption to a low level. The P4C1024
is a member of a family of PACE RAM™ products offer-
ing fast access times.
FUNCTIONAL BLOCK DIAGRAM
Advanced CMOS Technology
Fast t_OE
Automatic Power Down
Packages
—32-Pin 300 mil DIP and SOJ
—32-Pin 400 mil SOJ
—32-Pin 600 mil Ceramic DIP
—32-Pin 400 mil Ceramic DIP
—32-Pin Solder Seal Flatpack
—32-Pin LCC (450 x 500 mil)
—32-Pin Ceramic SOJ
The P4C1024 device provides asynchronous opera-
tions with matching access and cycle times. Memory
locations are specified on address pins A₀ to A₁₆.
Reading is accomplished by device selection (CE₁ low
and CE₂ high) and output enabling (OE) while write
enable (WE) remains HIGH. By presenting the ad-
dress under these conditions, the data in the ad-
dressed memory location is presented on the data
input/output pins. The input/output pins stay in the
HIGH Z state when either CE₁ or OE is HIGH or WE
or CE₂ is LOW.
PIN CONFIGURATION
DIP (P300, C10, C11),
SOJ (J300, J400, CJ1),
SOLDER SEAL
FLATPACK (FS-3) SIMILAR
LCC (L6)
Document # SRAM124 REV A
Revised October 2005