ASM3P2811A_1 Datasheet, PDF (4/11 Pages) PulseCore Semiconductor – Low Power EMI Reduction IC

April 2008
rev 1.6
Operating Conditions
Symbol
VDD
T_A
C_L
C_IN
Parameter
Voltage on any pin with respect to GND
Operating temperature
Load Capacitance
Input Capacitance
DC Electrical Characteristics
Symbol
Parameter
V_IL
Input low voltage
V_IH
Input high voltage
I_IL
Input low current
(Inputs D_C, SRS and FRS are pulled high internally)
I_IH
Input high current
I_XOL
XOUT Output low current
(V_XOL@ 0.4V, V_DD = 3.3V)
I_XOH
XOUT Output high current
(V_XOH@ 2.5V, V_DD = 3.3V)
V_OL
Output low voltage (V_DD = 3.3V, I_OL = 5mA)
V_OH Output high voltage (V_DD = 3.3V, I_OH = -5mA)
I_CC
I_DD
VDD
Dynamic supply current (Unloaded Output)
Static supply current , Standby mode
(CLKIN pulled to GND)
Operating voltage
t_ON
Z_OUT
Power up time (first locked clock cycle after power up)
Clock out impedance
AC Electrical Characteristics
Symbol
Parameter
f_IN
Input frequency for ASM3P2811/12/13/14 A/B
Output frequency for ASM3P2811A/B
f_OUT Output frequency for ASM3P2812A/B
Output frequency for ASM3P2814A/B
t_LH* Output rise time (measured at 0.8V to 2.0V)
t_HL* Output fall time (measured at 2.0V to 0.8V)
t_JC
Cycle to Cycle Jitter (Unloaded Output)
t_D
Output duty cycle
* t_LH and t_HL are measured into a capacitive load of 10pF
Min
VSS – 0.3
2
2.5
8
3.0
Min
10
10
20
40
0.5
0.8
45
ASM3P2811A/B
ASM3P2812A/B
ASM3P2814A/B
Min
Max
Unit
3.0
3.6
V
-40
+85
°C
10
pF
7
pF
Typ
Max
Unit
0.8
V
V_DD + 0.3
V
-50
µA
50
µA
3
mA
3
mA
0.4
V
V
18
mA
4.5
mA
3.3
3.6
V
500
µS
76
Ω
Typ
0.9
1.0
±250
50
Max
40
40
80
160
1.2
1.3
55
Unit
MHz
MHz
MHz
MHz
nS
nS
pS
%
Low Power EMI Reduction IC
Notice: The information in this document is subject to change without notice.
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