PE4312MLBA-Z Datasheet, PDF (4/13 Pages) Peregrine Semiconductor – UltraCMOS® RF Digital Step Attenuator 6-bit, 31.5 dB, 1 MHz–4 GHz

PE4312
Product Specification
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rate specified.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
Switching Frequency
The PE4312 has a maximum 25 kHz switching
rate in normal mode (pin 12 = GND). A faster
switching rate is available in bypass mode (pin 12
= V_{SS_EXT}). The rate at which the PE4312 can be
switched is then limited to the switching time as
specified in Table 1.
Switching frequency describes the time duration
between switching events. Switching time is the
time duration between the point the control signal
reaches 50% of the final value and the point the
output signal reaches within 10% or 90% of its
target value.
Safe Attenuation State Transitions
The PE4312 features a novel architecture to
provide safe transition behavior when changing
attenuation states. When RF input power is
applied, positive output power spikes are
prevented during attenuation state changes by
optimized internal timing control.
Resistor on Pin 1 & 3
A 10 kΩ resistor on the inputs to pin 1 and 3 (see
Figure 26) will eliminate package resonance
between the RF input pin and the two digital
inputs. Specified attenuation error versus
frequency performance is dependent upon this
condition.
Moisture Sensitivity Level
The moisture sensitivity level rating for the
PE4312 in the 4 × 4 mm QFN package is MSL1.
Spurious Performance
The typical low-frequency spurious performance
of the PE4312 in normal mode is –140 dBm
(pin 12 = GND). If spur-free performance is
desired, the internal negative voltage generator
can be disabled by applying a negative voltage to
V_{SS_EXT} (pin 12).
Figure 4. Power Derating Curve for 1–50 MHz
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
RF Input Power, CW or Pulsed (‐40C to 105C)
5
10
15
20
25
30
35
40
45
50
Frequency (MHz)
©2017 Peregrine Semiconductor Corp. All rights reserved.
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Document No. DOC-81482-1 │ UltraCMOS^® RFIC Solutions