PE42920 Datasheet, PDF (1/13 Pages) Peregrine Semiconductor – UltraCMOS Passive DDSPDT High-Isolation RF Switch 10 kHz-6 GHz

Product Description
The PE42920 is a dual differential single pole double
throw (DDSPDT) RF switch developed on Peregrine’s
UltraCMOS^® process technology. It is a broadband and
low loss device enabling the switching of two
independent differential signals. This device consumes
less power than active differential switches and offers 2
kV HBM ESD protection. It has high isolation between
same channel inputs as well as opposite active channels.
It has been designed for low phase mismatch between
matched paths.
The PE42920 is manufactured on Peregrine’s
UltraCMOS process, a patented variation of silicon-on-
insulator (SOI) technology on a sapphire substrate,
offering the performance of GaAs with the economy and
integration of conventional CMOS.
Product Specification
PE42920
UltraCMOS^® Passive DDSPDT
High-Isolation RF Switch
10 kHz–6 GHz
Features
 Dual differential single pole double
throw switch
 Broadband: 10 kHz to 6 GHz
 Low frequency insertion loss: 0.7 dB
typical
 High isolation between same channels
at 6 GHz: 26 dB typical
 High isolation between opposite active
channels at 6 GHz: 30 dB typical
 Low phase mismatch between matched
paths at 6 GHz: 15 degrees typical
 High ESD performance: 2 kV HBM
Figure 2. Package Type
16-lead 3 × 3 mm QFN
Figure 1. Functional Diagram
A1
A2
X1
X2
50 kΩ 100 kΩ 100 kΩ 50 kΩ
V_DDA
50 kΩ 100 kΩ 100 kΩ 50 kΩ
V_DDX
CMOS Control /
Driver and ESD
B1 C1
B2 C2 V_SEL V_DDA V_DDX Y1 Z1
Note: Differential pairs B1/B2 and Y1/Y2 must be switched simultaneously to pairs
C1/C2 and Z1/Z2. See Table 5, Truth Table.
Y2 Z2
DOC-52427
Document No. DOC-12914-3 │ www.psemi.com
©2012-2015 Peregrine Semiconductor Corp. All rights reserved.
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