PE42553 Datasheet, PDF (1/19 Pages) Peregrine Semiconductor – UltraCMOS SPDT RF Switch, 9 kHz-8 GHz

PE42553
Product Specification
UltraCMOS® SPDT RF Switch, 9 kHz–8 GHz
Features
Applications
• Excellent power handling: 36 dBm CW and 38 dBm
pulsed power in 50Ω @ 8 GHz
• High linearity: IIP3 of 66 dBm
• High isolation
▪ 45 dB @ 3 GHz
▪ 41 dB @ 8 GHz
• HaRP™ technology enhanced
▪ Fast settling time
▪ No gate and phase lag
• Test and measurement
▪ Signal sources
▪ Communication testers
▪ Spectrum analyzers
▪ Network analyzers
• Automated test equipment
• General purpose TX/RX switch
Figure 1 • PE42553 Functional Diagram
▪ No drift in insertion loss and phase
• High ESD performance
RFC
▪ 2.5 kV HBM on all pins, 4 kV HBM on RF pins to
GND
▪ 1 kV CDM on all pins
RF1
RF2
• Packaging – 16-lead 3 × 3 mm QFN
50Ω
50Ω
CMOS Control Driver and ESD
LS
CTRL V_{SS_EXT}
Product Description
The PE42553 is a HaRP^TM technology-enhanced absorptive SPDT RF switch that supports a broad frequency
range from 9 kHz to 8 GHz. This general purpose switch maintains excellent linearity, high RF performance and
fast settling time making this device ideal for test and measurement (T&M), automated test equipment (ATE)
and other high performance wireless applications.
The PE42553 is a pin-compatible version of the PE42552 with improved power handling capability of 36 dBm
continuous wave (CW) and 38 dBm pulsed power in 50Ω at 8 GHz. No blocking capacitors are required if DC
voltage is not present on the RF ports. The PE42553 is manufactured on Peregrine’s UltraCMOS^® process, a
patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate.
©2014, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-62463-2 – (11/2014)