DALC112S1 Datasheet, PDF (2/4 Pages) STMicroelectronics – LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION

DEVICE CHARACTERISTICS
MAXIMUM RATINGS @ 25°C Unless Otherwise Specified
PARAMETER
SYMBOL
Operating Temperature
T_J
Storage Temperature
T_STG
Continuous Power Dissipation
P_PC
DALC112S1
VALUE
-55°C to 150°C
-55°C to 150°C
145
UNITS
°C
°C
mW
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless Otherwise Specified
PART
NUMBER
DEVICE
MARKING
REPETITIVE
PEAK
REVERSE
VOLTAGE
TYPICAL
FORWARD
VOLTAGE
MAXIMUM
PEAK PULSE
FORWARD
CURRENT
MAXIMUM
REVERSE
LEAKAGE
CURRENT
MAXIMUM
QUIESCENT
SUPPLY
CURRENT
TYPICAL
CAPACITANCE
DALC112S1
PSC
V
RRM
VOLTS
20
@50mA
V
F
VOLTS
1.3
8/20µs
I_FM
AMPS
12
V_RRM@18V
I
R
nA
20
@20V
I
RQ
nA
200
@0V, 1 MHz
Cj
pF
5
FIGURE 1
NON-REPETITIVE PEAK PULSE CURRENT CAPABILITY
8
6
4
2
0
0.001
0.01
0.1
1
10
100
Square Wave Pulse - ms
120
100
80
60
40
20
0
0
FIGURE 2
PULSE WAVE FORM
TEST
t_f
Peak Value I_PP WAVEFORM
PARAMETERS
t = 8µs
f
e^-t
t = 20µs
d
t_d = t _IPP/2
5
10
15
20
25
30
t - Time - µs
05177.R2 3/05
2
www.protekdevices.com