PSII35-06 Datasheet, PDF (5/5 Pages) Powersem GmbH – IGBT Module

Diode
40
A
I_F ³⁰
20
T_VJ=150°C
T_VJ=100°C
T_VJ= 25°C
10
2000
T_VJ= 100°C
nC ^VR ^{= 300V}
1500
Q_r
1000
500
I_F= 30A
I_F= 15A
I_F= 7.5A
PSII 35/06
40
T_VJ= 100°C
A ^{VR = 300V}
30
I_RM
20
I_F= 30A
I_F= 15A
I_F= 7.5A
10
0
0
1
2V
V_F
Forward current I_F versus V_F
2.0
1.5
K_f
1.0
0.5
I_RM
Q_r
0
100
A/µs 1000
-di_F/dt
Reverse recovery charge Q_r
versus -di_F/dt
120
ns
t_rr ¹¹⁰
100
90
T_VJ= 100°C
V_R = 300V
I_F= 30A
I_F= 15A
I_F= 7.5A
80
0
0 200 400 600 A8/0µ0s 1000
-di_F/dt
Peak reverse current I_RM
versus -di_F/dt
20
T_VJ= 100°C
V ^IF ^{= 15A}
V_FR
15
1.6
V_FR
µs
t_fr
1.2
t _fr
10
0.8
5
0.4
0.0
0
40
80 120 °C 160
T_VJ
Dynamic parameters Q_r, I_RM
versus T_VJ
70
0 200 400 600 A8/0µ0s 1000
-di_F/dt
Recovery time t_rr versus -di_F/dt
15-06A
0
0.0
0 200 400 600 A80/µ0s 1000
di_F/dt
Peak forward voltage V_FR and t_fr
versus di_F/dt
10
(_thZ_{ethJrHmisalmgereaassuer)}ed using 50 µm
1
0.00001 0.0001 0.001
0.01 _t(s) 0.1
1
Transient thermal resistance junction to heatsink
D =0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
FRED
0.1 ZthJH [K/W]
0.01
0.001
10
100
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20