PSII30-06 Datasheet, PDF (4/4 Pages) Powersem GmbH – IGBT Module

8
V_CE = 300V
mJ _{VGE = ±15V}
E_on
6 ^{RG = 33Ω}
T_VJ = 125°C
80
t_r
ns
t_d(on) ⁶⁰ _t
2,0
mJ
E_off ^1,5 _{VCE = 300V}
400
E_off
ns
300
t
4
E_on
40
V_GE = ±15V
1,0 ^RG ^{= 33Ω}
t_d(off)
200
T_VJ = 125°C
2
20
sheet ⁰
0 ^25T60
0
20
40
60 A
I_C
Fig. 7 Typ. turn on energy and switching
tentative ^{dsattiall under 4}
V_CE = 300V
mJ V_GE = ±15V
t ^Eon
3
I_C = 30A
T_VJ = 125°C
uct ^{en 2}
pm ¹
t_d(on) ⁸⁰
ns
t_r
60 ^t
E_on
40
prod _evelo ⁰
20 ^25T60
0 10 20 30 40 50 60 70 Ω 80
R_G
d Fig. 9 Typ. turn on energy and switching
0,5
100
0,0
0
t_f
0 ^25T60
20
40
60 A
I_C
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
2,0
mJ
V_CE = 300 V
V_GE = ±15 V
E_{off 1,5} ^IC ^{= 30 A}
T_VJ = 125°C
1,0
400
t_{d(off) ns}
300 _t
E_off
200
0,5
100
0,0
0
t_f
0 ^25T60
10 20 30 40 50 60 70Ω 80
R_G
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
80
A
I_CM ⁶⁰
10
K/W
1
Z_thJC
diode
IGBT
0,1
40
0,01
20
R_G = 33 Ω
T_VJ = 125°C
0
25T60
0 100 200 300 400 500 600 700 V
V_CE
Fig. 11 Reverse biased safe operating area
0,001
single pulse
0,0001
0,00001 0,0001 0,001 0,01
0,1
t
VDI...50-06P1
1 s 10
Fig. 12 Typ. transient thermal impedance
RBSOA
POWERSEM GmbH, Walpersdorfer Str. 53
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20