PSIG160-12 Datasheet, PDF (4/4 Pages) Powersem GmbH – IGBT Module

PSIG PSIS PSSI 160/12
40
mJ
E_on ³⁰
20
10
t_d(on)
E_on
120
ns
90
t_r
t
60
V_CE = 600V
V_GE = ±15V
R_G = 6.8Ω
T_J = 125°C
30
0
0 ^156T120
0
50
100
150
200 A
I_C
Fig. 7 Typ. turn on energy and switching
times versus collector current
50
mJ
V_CE = 600V
V_GE = ±15V
40
E_on
I_C = 100A
T_J = 125°C
30
E_on
300
ns
t_{d(on) 240}
t
t_{r 180}
20
120
10
60
0
0 ^156T120
0 8 16 24 32 40 48 Ω 56
R_G
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
240
A
200
I_{CM 160}
120
80
R_G = 6.8Ω
T_J = 125°C
V_CEK < V_CES
40
0
156T120
0 200 400 600 800 1000 1200 V
V_CE
Fig. 11 Reverse biased safe operating area
RBSOA
40
mJ
E_off ³⁰
800
t_d(off)
E_off
ns
600
t
20
V_CE = 600V ⁴⁰⁰
V_GE = ±15V
10
R_G = 6.8Ω
T_J = 125°C
200
0
t _{156T120 f}
0
0
50
100
150
200 A
I_C
Fig. 8 Typ. turn off energy and switching
times versus collector current
25
mJ
20
E_off
15
V_CE = 600V
V_GE = ±15V
I_C = 100A
T_J = 125°C
1500
t_{d(off) ns}
E_off
1200
t
900
10
600
5
300
0
156T120
t_f
0
0 8 16 24 32 40 48 Ω 56
R_G
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0,1
Z_thJC
0,01
diode
IGBT
0,001
0,0001
single pulse
0,00001
0,00001 0,0001 0,001
0,01
VDI...160-12P1
0,1 s 1
t
Fig. 12 Typ. transient thermal impedance
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20