PSHI2512 Datasheet, PDF (4/4 Pages) Powersem GmbH – IGBT Module Short Circuit SOA

6
mJ
E_{on 4}
t_d(on)
t_r
2
E_on
V_CE = 600V
V_GE = ±15V
R_G = 82Ω
T_VJ = 125°C
120
ns
80 ^t
40
0
25T120 ₀
0
10
20
30 A
I_C
Fig. 7 Typ. turn on energy and switching
3
mJ
E_on
2
1
E_on ¹⁵⁰
t_d(on)
t_r
ns
100 ^t
V_CE = 600V
V_GE = ±15V
I_C = 15A
50
T_VJ = 125°C
0
25T120 ₀
0 20 40 60 80 100 120 Ω 140
R_G
Fig. 9 Typ. turn on energy and switching
40
A
I_CM ³⁰
20
10
R_G = 82 Ω
T_VJ = 125°C
0
25T120
0 200 400 600 800 1000 1200 1400 V
V_CE
Fig. 11 Reverse biased safe operating area
PSHI 25/12
6
mJ
E_{off 4}
2
V_CE = 600V
V_GE = ±15V
R_G = 82Ω
T_VJ = 125°C
600
t_d(off)
E_off
ns
400 ^t
200
t_f
0
25T120 ₀
0
10
20
30 A
I_C
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
2,0
mJ
E_off
E_{off 1,5}
800
t_d(off)
ns
600 _t
1,0
V_CE = 600V
V_GE = ±15V
400
I_C = 15A
0,5
T_VJ = 125°C
200
0,0
0
t_f
0 ^25T120
20 40 60 80 100 120 Ω 140
R_G
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
diode
1
Z_thJC
IGBT
0,1
0,01
0,001
single pulse
0,0001
0,00001 0,0001 0,001 0,01 0,1
VDI...25-12P1
1 s 10
t
Fig. 12 Typ. transient thermal impedance RBSOA
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20