PSKT312 Datasheet, PDF (3/4 Pages) Powersem GmbH – Thyristor/Diode Modules

10000
I_{TSM A}
8000
6000
4000
2000
50 Hz
80 % V_RRM
T_VJ = 45°C
T_VJ = 140°C
10⁶
I²t
V_R = 0V
A²s
T_VJ = 45°C
T_VJ = 140°C
10⁵
600
A
II_{TAVM 500}
FAVM
400
300
200
100
DC
180° sin
120°
60°
30°
0
0.001
0.01
0.1 s 1
t
Fig. 3 Surge overload current
I_TSM, I_FSM: Crest value, t: duration
600
P_{tot W}
500
400
300
DC
180° sin
200
120°
60°
30°
100
10⁴
1
ms 10
t
Fig. 4 I²t versus time (1-10 ms)
R_thKA K/W
0.06
0.1
0.2
0.3
0.4
0.6
0.8
0
0 25 50 75 100 125 °C 150
Fig. 4a Maximum forward cu^Tr^Crent
at case temperature
Fig. 5
Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
0
0 100 200 300 400 500 A 0
I_TAVM / I_FAVM
25
50
75
100 1°2C5 150
T_A
3000
P_{tot W}
2500
2000
1500
1000
500
Circuit
B6
3xPMSCKCH33112 oorr
3^3xx^PM^SC^KD^T 3³¹1²2
R_thKA K/W
0.02
0.04
0.07
0.1
0.15
0.2
0.3
0
0
200 400 600 800 A 0
I_dAVM
25
50
75
100 1°2C5 150
T_A
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
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