PSKT224 Datasheet, PDF (3/4 Pages) Powersem GmbH – Thyristor/Diode Modules

8000
I_{TSM A}
6000
4000
50 Hz
80 %
TT_VVJJ
=
=
V_4R5R°MC
130°C
10⁶
I²t
V_R = 0V
A²s
T_VJ = 45°C
10⁵
T_VJ = 130°C
400
A
350
I_TAVM
300
250
200
DC
180° sin
120°
60°
30°
150
2000
100
50
0
0.001
0.01
0.1 s 1
t
Fig. 3 Surge overload current
I_TSM: Crest value, t: duration
500
P_{tot W}
400
300
DC
200
180° sin
120°
60°
30°
100
10⁴
1
ms 10
t
Fig. 4 I²t versus time (1-10 ms)
R_thKA K/W
0.1
0.2
0.3
0.4
0.6
0.8
1
0
0 25 50 75 100 125 °C 150
T_C
Fig. 4a Maximum forward current
at case temperature
Fig. 5
Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
0
0
100
200
300 A 0
25
50
75
100 1°2C5 150
I_TAVM
T_A
2000
P_tot
W
1500
1000
500
CB33xxi6rPPcSSu_{CB3KKit6xirHTMcu2C2i2t2C442o2r4}
R_thKA K/W
0.03
0.05
0.08
0.1
0.15
0.2
0.3
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
0
0
200
400
600 A 0
25
50
75
100 1°2C5 150
I_dAVM
T_A
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 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20