PSKT170 Datasheet, PDF (3/4 Pages) Powersem GmbH – Thyristor/Diode Modules

6000
I_{TSM A}
5000
4000
3000
50 Hz
80 % V_RRM
T_VJ = 45°C
T_VJ = 130°C
10⁶
I²dt
A²s
10⁵
T_VJ = 45°C
400
I_TAVM
I_FAVM
A
300
200
DC
180° sin
120°
60°
30°
2000
1000
T_VJ = 130°C
100
0
0.001
0.01
0.1
s
1
t
Fig. 3 Surge overload current
I_TSM, I_FSM: Crest value, t: duration
400
P_tot
W
300
200
DC
180° sin
120°
60°
100
30°
10⁴
1
ms 10
t
Fig. 4 ∫i²dt versus time (1-10 ms)
R_thKA K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
0
0
25 50 75 100 125 °C 150
T_C
Fig. 4a Maximum forward current
at case temperature
Fig. 5
Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
0
0
100
200
300 A 0
25
50
75
100
125 °C 150
I_TAVM/I_FAVM
T_A
2000
P_tot
W
1500
1000
500
Circuit
B6
3³x^xM^PSC^KC^T1¹7⁷0⁰
R_thKA K/W
0.04
0.06
0.08
0.1
0.15
0.2
0.3
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
0
0
200
400
600 A 0
25
50
75
100
125 °C 150
I_dAVM
T_A
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20