PSII30-12 Datasheet, PDF (3/4 Pages) Powersem GmbH – IGBT Module

80
80
A
I_C 60
V_GE = 17 V
15 V
13 V
A
I_{C 60}
V_GE = 17V
15V
13V
11V
11V
40
40
T_VJ = 25°C
20
9V
20
9V
0
42T120
0 1 2 3 4 5 6 V7
T_VJ = 125°C ^42T120
0
0 1 2 3 4 5 6 V7
V_CE
V_CE
Fig. 1 Typ. output characteristics
sheet ⁸⁰
A
60
I_C
ata ^{er 40}
V_CE = 20V
tentative dstill und 20
T_VJ = 125°C
t ₀
uct ^{en 4}
6
8
T_VJ = 25°C
10 12
V_GE
42T120
14 V 16
m _{Fig. 3 Typ. transfer characteristics}
prod _evelop ²⁰
V
15
d V_GE
Fig. 2 Typ. output characteristics
50
I_F ^4A0
30
20
T_VJ = 125°C
T_VJ = 25°C
10
0
42T120
0
1
2
3V4
V_F
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
t_rr
4A0
I_RM
30
200
1_n6_s0 _trr
120
10
V_CE = 600V
I_C = 25A
5
20
T_VJ = 125°C
V_R = 600 V
80
I_F = 15 A
10
40
0
42T120
0
40
80
120 nC 160
Q_G
I_RM
0
0 ^42T120
0
200 400 600 8A00/µs 1000
-di/dt
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
POWERSEM GmbH, Walpersdorfer Str. 53
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20