PSIG100-12 Datasheet, PDF (3/4 Pages) Powersem GmbH – IGBT Module

PSIG PSIS PSSI 100/12
175
T_J = 25°C
1^A50
I_{C 125}
100
V_GE=17V
15V
13V
11V
75
50
9V
25
0
121T120
0,0 0,5 1,0 1,5 2,0 2,5 3,0 V
V_CE
Fig. 1 Typ. output characteristics
150
V_CE = 20V
1A25 ^{TJ = 25°C}
I_{C 100}
75
50
25
0
121T120
5 6 7 8 9 10 11 V
V_GE
Fig. 3 Typ. transfer characteristics
20
V
V_GE ¹⁵
V_CE = 600V
I_C = 75A
10
5
0
121T120
0
100 200 300 400 nC
Q_G
Fig. 5 Typ. turn on gate charge
175
T_J = 125°C
15A0
I_{C 125}
100
V_GE=17V
15V
13V
11V
75
50
9V
25
0
121T120
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 V
V_CE
Fig. 2 Typ. output characteristics
300
A
250
I_{F 200}
T_J = 125°C
T_J = 25°C
150
100
50
0
121T120
0,5 1,0 1,5 2,0 2,5 3,0 V 3,5
V_F
Fig. 4 Typ. forward characteristics of
free wheeling diode
120
A
I_RM
t_rr
80
300
ns
t_rr
200
40
I_RM
T_J = 125°C
V_R = 600V
I_F = 75A
100
0
0 ^121T120
0
200 400 600 8A00/µs 1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
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 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
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