PSHI25-12 Datasheet, PDF (3/4 Pages) Powersem GmbH – IGBT Module

PSHI 25/12
50
4A0
I_C
30
20
V_GE = 17V
15V
13V
T_VJ = 25°C
11V
10
9V
0
25T120
0 1 2 3 4 5 6 V7
V_CE
Fig. 1 Typ. output characteristics
50
I_C ^4A0
30
20
V_GE = 17V
15V
13V
T_VJ = 125°C
11V
10
9V
0
25T120
0 1 2 3 4 5 6 V7
V_CE
Fig. 2 Typ. output characteristics
50
4A0
I_C
30
V_CE = 20V
20
T_VJ = 125°C
10
T_VJ = 25°C
0
25T120
4
6
8 10 12 14 V 16
V_GE
Fig. 3 Typ. transfer characteristics
20
V
15
V_GE
10
V_CE = 600V
I_C = 15A
5
0
25T120
0
20
40
60
80 nC 100
Q_G
Fig. 5 Typ. turn on gate charge
50
I_F ^4A0
30
20
T_VJ = 125°C
T_VJ = 25°C
10
0
0
Fig. 4
25T120
1
2
3V4
V_F
Typ. forward characteristics of
free wheeling diode
50
4A0
I_RM
30
20
t_rr
T_VJ = 125°C
V_R = 600V
I_F = 15A
200
1n6s0 _trr
120
80
10
40
I_RM
0
0 ^25T120
0
200 400 600 8A00/µs 1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20