PSBZ75 Datasheet, PDF (3/3 Pages) Powersem GmbH – Single Phase Half Controlled Bridges

PSBZ 75
10
V ^{1: IGT, TVJ = 125°C}
2: I_GT, T_VJ = 25°C
3: I_GT, T_VJ = -40°C
4: P_GAV = 0.5 W
5: P_GM = 5 W
6: P_GM = 10W
1
V_G
0.1
10 ⁰
4
3
2
1
10¹ I_G
10 ²
10 ³
Fig.4 Gate trigger characteristic
6
5
mA
10⁴
80
[A]
60
40
DC
sin.180°
rec.120°
rec.60°
rec.30°
20
ITAV
0
50
100
150
200
TC(°C)
Fig.5 Maximum forward current
at case temperature
K/W
1
Z _thJK
0.8
Z _thJC
0.6
0.4
0.2
Z _th
0.01
0.1
1
10
t[s]
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
300
[W] _{PSBZ 75}
250
75
TC
0.17 0.09 = RTHCA [K/W] ⁸⁰
0.25
85
200
90
0.39
95
150
100
100
50
PVTOT
0
10 30
ITAVM
DC
sin.180°
rec.120°
rec.60°
rec.30°
0.67
1.5
50 70 0
50
[A] Tamb
105
110
115
100
120
°C
125
150
[K]
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
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91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions