PSKD312 Datasheet, PDF (2/3 Pages) Powersem GmbH – Diode Modules

10000
I_{FSM A}
8000
6000
50 Hz
80 % V_RRM
T_VJ = 45°C
T_VJ = 150°C
4000
2000
0
0.001
0.01
0.1 s 1
t
Fig. 1 Surge overload current
I_FSM: Crest value, t: duration
600
P_{tot W}
500
400
300
DC
180° sin
200
120°
60°
30°
100
10⁶
I²t
V_R = 0V
A²s
550
A
500
I_{FAVM 450}
400
DC
180° sin
120°
60°
30°
350
T_VJ = 45°C
300
250
T_VJ = 150°C
200
150
100
50
10⁵
1
ms 10
t
Fig. 2 I²t versus time (1-10 ms)
0
0 25 50 75 100 125 °C 150
T_C
Fig. 3 Maximum forward current
at case temperature
R_thKA K/W
0.06
0.1
0.2
0.3
0.4
0.6
0.8
Fig. 4 Power dissipation versus
forward current and ambient
temperature (per diode)
0
0 100 200 300 400 500 A 0
I_FAVM
25
50
75
100 1°2C5 150
T_A
1750
P_{tot W}
1500
1250
R
L
1000
750
C^Cirⁱc^rcu^uit^it
B^B2U^{2 U}
500
2²x^x M^PSD^KD^D3³1¹2²
250
0
0 100 200 300 400 500 600 A 0
I_dAVM
R_thKA K/W
0.04
0.06
0.08
0.12
0.2
0.3
0.5
25
50
75
100 1°2C5 150
T_A
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
POWERSEM GmbH, Walpersdorfer Str. 53
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20