PSDT110 Datasheet, PDF (2/3 Pages) Powersem GmbH – Three Phase Full Controlled Bridges

Symbol
I_D, I_R
V_T
V_TO
r_T
V_GT
I_GT
V_GD
I_GD
I_L
I_H
t_gd
t_q
R_thJC
R_thJK
d_S
d_A
a
Test Conditions
Characteristic Value
T_VJ = T_VJM, V_R = V_RRM, V_D = V_DRM
≤
5
mA
I_T = 200A, T_VJ = 25°C
≤
1.75
V
For power-loss calculations only (T_VJ = T_VJM)
0.85
V
6
mΩ
V_D = 6V
T_VJ = 25°C
T_VJ = -40°C
≤
1.5
V
≤
1.6
V
V_D = 6V
T_VJ = 25°C
T_VJ = -40°C
≤
100
mA
≤
200
mA
T_VJ = T_VJM
T_VJ = T_VJM
V_D = 2/3 V_DRM
V_D = 2/3 V_DRM
≤
0.2
V
≤
5
mA
T_VJ = 25°C, t_P = 30µs
≤
450
mA
I_G = 0.3A, di_G/dt = 0.3A/µs
T_VJ = 25°C, V_D = 6V, R_GK = ∞
≤
200
mA
T_VJ = 25°C, V_D = ½ V_DRM
≤
2
µs
I_G = 0.3A, di_G/dt = 0.3A/µs
T_VJ = T_VJM, I_T = 20A, t_P = 200µs, V_R = 100V
150
µs
-di/dt = 10A/µs, dv/dt = 15V/µs, V_D = 2/3 V_DRM
per thyristor; sine 180°el
0.65
K/W
per module
0.108
K/W
per thyristor; sine 180° el
per module
0.8
K/W
0.133
K/W
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
10.0
9.4
50
mm
mm
m/s²
PSDT 110
300
[A] ^{1:TVJ= 125°C}
250 ^{2:TVJ= 25°C}
200
150
100
50
IF
1
2
0
0.5
1
1.5
2
V _F [V]
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
T =25°C
VJ
us
100
tgd
10
1
10
100
1000
I [mA]
G
Fig. 2 Gate trigger delay time
I-I-TT-S(-MO-V-)
1.6
ITSM (A)
TVJ=45°C TVJ=150°C
1150
1000
1.4
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 3 Surge overload current
per diode (or thyristor) I_FSM,
I_TSM: Crest value t: duration
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions