PSMI40-06 Datasheet, PDF (1/2 Pages) Powersem GmbH – CoolMOS Power MOSFET

CoolMOS Power MOSFET
in ECO-PAC 2
PSMI 40/06
N-Channel Enhancement Mode
Low R_DSon, High V_DSS MOSFET
Package with Electrically Isolated Base
Preliminary Data Sheet
L4
L6
L9
P18
R18
K12
NTC
K13
ECO-PAC^TM 2
I_D25
V_DSS
R_DSon
= 38 A
= 600 V
= 70 mΩ
1)
MOSFET
Features
Symbol
V_DSS
V_GS
I_D25
I_D90
dv/dt
E_AS
E_AR
Conditions
T_VJ = 25°C to 150°C
T_C = 25°C
T_C = 90°C
V_DS < V_DSS; I_F ≤ 50A;di_F/dt≤ 200A/µs
T_VJ = 150°C
I_D = 10 A; L = 36 mH; T_C = 25°C
I_D = 20 A; L = 5 µH; T_C = 25°C
Maximum Ratings
600
V
±20
V
38
A
25
A
6 V/ns
1.8
J
1
mJ
Symbol
R_DSon
V_GSth
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_F
R_thJC
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 10 V; I_D = I_D90
V_DS = 20 V; I_D = 3 mA;
V_DS = V_DSS; V_GS = 0 V; T_VJ = 25°C
T_VJ = 125°C
V_GS = ±20 V; V_DS = 0 V
V_GS= 10 V; V_DS = 350 V; I_D = 50 A
70 m Ω
3.5
5.5 V
25 µA
60
µA
100 nA
220
nC
55
nC
125
nC
V_GS= 10 V; V_DS = 380 V;
I_D = 25 A; R_G = 1.8 Ω
30
ns
95
ns
100
ns
10
ns
(reverse conduction) I_F = 20 A; V_GS = 0 V
per MOSFET
0.9 1.1 V
0.45 K/W
Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
• ECO-PAC 2 with DCB Base
- Electrical isolation towards the
heatsink
- Low coupling capacitance to the heatsink
for reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- solderable pins for DCB mounting
• fastCoolMOSpowerMOSFET-2^ndgeneration
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
• UL registered, E 148688
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• High power density
• Small and light weight
1) _{CoolMOS is a trademark of Infineon Technologies AG.}
POWERSEM GmbH, Walpersdorfer Str. 53
 2004 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20