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| PSMG50-05 Datasheet, PDF (1/4 Pages) Powersem GmbH – HiPerFETTM Power MOSFET | |||
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HiPerFETTM Power MOSFET
in ECO-PAC 2
PSMG 50/05*
(Electrically Isolated Back Surface)
Single MOSFET Die
X18
I K10 A1
LN9
ECO-PACTM 2
ID25
VDSS
RDSon
trr
= 43 A
= 500 V
= 100 mâ¦
< 250 ns
Preliminary Data Sheet
K13
K15
*NTC optional
MOSFET
Symbol
VDSS
VGS
ID25
ID90
dv/dt
EAS
EAR
Symbol
RDSon
VGSth
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VF
RthJC
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VDS < VDSS; IF ⤠50A;diF/dt⤠100A/µs
TVJ = 150°C
ID = 10 A; L = 36 mH; TC = 25°C
ID = 20 A; L = 5 µH; TC = 25°C
Maximum Ratings
500
V
±20
V
43
A
tbd
A
5 V/ns
3
J
60
mJ
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = ID90
VDS = 20 V; ID = 8 mA;
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
VGS= 10 V; VDS = 250 V; ID = 50 A
100
mâ¦
2
4V
100 µA
2 mA
100 nA
330
nC
55
nC
155
nC
VGS= 10 V; VDS = 380 V;
ID = 25 A; RG = 1.8 â¦
45
ns
60
ns
120
ns
45
ns
Features
⢠ECO-PAC 2 with DCB Base
- Electrical isolation towards the
heatsink
- Low coupling capacitance to the
heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- solderable pins for DCB mounting
⢠fast CoolMOS power MOSFET
- 2nd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
⢠Enhanced total power density
⢠UL certified, E 148688
Applications
⢠Switched mode power supplies
(SMPS)
⢠Uninterruptible power supplies (UPS)
⢠Power factor correction (PFC)
⢠Welding
⢠Inductive heating
(reverse conduction) IF = 20 A; VGS = 0 V
per MOSFET
V
0.3 K/W
Caution: These Devices are
sensitive to electrostatic
discharge. Users should observe
proper ESD handling precautions.
POWERSEM GmbH, Walpersdorfer Str. 53
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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