LQA32T300C Datasheet, PDF (2/7 Pages) Power Integrations, Inc. – 300 V, 32 A Q-Series Common-Cathode Diode

LQA32T300C
Electrical Specifications at T_J= 25 °C (unless otherwise specified)
Symbol Parameter
Conditions
Min Typ Max
DC Characteristics
I_R
Reverse current per diode V_R = 300 V, T_J = 25 °C
-
V_R = 300 V, T_J = 125 °C
-
V_F
Forward voltage per diode I_F = 16 A, T_J = 25 °C
-
I_F = 16 A, T_J = 150 °C
-
C_J
Junction capacitance per VR = 10 V, 1 MHz
-
diode
Dynamic Characteristics
t_RR
Reverse recovery time,
dI_F/dt =200 A/µs TJ=25 °C
-
per diode
V_R=200, I_F=16 A _{TJ=125 °C}
-
Q_RR
Reverse recovery charge, dI_F/dt =200 A/µs TJ=25 °C
-
per diode
V_R=200, I_F=16 A _{TJ =125 °C}
-
I_RRM
Maximum reverse
dI_F/dt =200 A/µs TJ =25 °C
-
recovery current, per
diode
V_R=200, I_F=16 A _{TJ=125 °C}
-
S
Softness per diode= ^tb
t_a
dI_F/dt =200 A/µs TJ =25 °C
V_R=200, I_F=16 A _{TJ=125 °C}
-
-
-
25
0.45
-
1.6
1.9
1.4
-
50
-
13
-
25
-
11.5
15
44
-
1.5
1.85
2.65
-
0.7
-
0.7
-
Units
µA
mA
V
V
pF
ns
ns
nC
nC
A
A
Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction.
Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups.
(For further details, see application note AN-300.)
VR
I_F
0
dI_F/dt
t_RR
t_a
t_b
I_RRM
0.1xI_RRM
Pulse generator
D1
L1
DUT
15V
+
Rg
Q1
Figure 1. Reverse Recovery Definitions
Figure 2. Reverse Recovery Test Circuit
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2
Rev 1.1 01/11