LQA16T300 Datasheet, PDF (2/7 Pages) Power Integrations, Inc. – 300 V, 16 A Q-Series Diode

LQA16T300
Electrical Specifications at T_J= 25 °C (unless otherwise specified)
Symbol Parameter
Conditions
Min Typ Max
DC Characteristics
I_R
Reverse current
V_R = 300V, T_J = 25 °C
-
V_R = 300V, T_J = 125 °C
-
V_F
Forward voltage
I_F = 16A, T_J = 25 °C
-
I_F = 16A, T_J = 150 °C
-
C_J
Junction capacitance
V_R = 10V, 1 MHz
-
Dynamic Characteristics
t_RR
Reverse recovery time
dI/dt =200A/µs TJ=25 °C
-
V_R=200V,I_F=16A _{TJ=125 °C}
-
Q_RR
Reverse recovery charge dI/dt =200A/µs T_J=25 °C
-
V_R=200V,I_F=16A _{TJ=125 °C}
-
I_RRM
Maximum reverse
recovery current
dI/dt =200A/µs TJ =25 °C
-
V_R=200V,I_F=16A _{TJ=125 °C}
-
S
Softness factor = ^tb
t_a
dI/dt =200A/µs TJ =25 °C
-
V_R=200V,I_F=16A _{TJ=125 °C}
-
-
25
0.45
-
1.6
1.9
1.4
-
50
-
13
-
25
-
11.5
15
44
-
1.5
1.85
2.65
-
0.7
-
0.7
-
Units
µA
mA
V
V
pF
ns
ns
nC
nC
A
A
Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction.
Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups.
(For additional details, see Application Note AN-300.)
VR
I_F
0
dI_F/dt
t_RR
t_a
t_b
I_RRM
0.1xI_RRM
Pulse generator
D1
L1
DUT
15V
+
Rg
Q1
Figure 1. Reverse Recovery Definitions
Figure 2. Reverse Recovery Test Circuit
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2
Rev 1.7 01/11