LQA03TC600 Datasheet, PDF (1/7 Pages) Power Integrations, Inc. – 600 V, 3 A Q-Series PFC Diode

LQA03TC600
Qspeed^™ Family
600 V, 3 A Q-Series PFC Diode
Product Summary
I_F(AVG)
3
A
V_RRM
600
V
Q_RR (Typ at 125 °C)
17.5
nC
I_RRM (Typ at 125 °C)
1.28
A
Softness t_b/t_a (Typ at 125 °C) 1.5
Pin Assignment
NC
C
NC
A
A
C
TO-220AC
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
General Description
This device has the lowest Q_RR of any 600 V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
• Power Factor Correction (PFC) Boost Diode
• Motor drive circuits
• DC-AC Inverters
Features
• Low Q_RR, Low I_RRM, Low t_RR
• High dI_F/dt capable (1000A/µs)
• Soft recovery
Benefits
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size & count
• Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Symbol
V_RRM
I_F(AVG)
I_FSM
I_FSM
T_J(MAX)
T_STG
V_ISOL
P_D
Parameter
Peak repetitive reverse voltage
Average forward current
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Isolation voltage (leads-to-tab)
Power dissipation
Conditions
T_J = 150 °C, T_C = 122 °C
60 Hz, ½ cycle
½ cycle of t=28 µs Sinusoid, T_C=25 °C
Leads at 1.6 mm from case, 10 sec
DC, + to tab
T_C = 25 °C
Rating
600
3
30
350
150
–55 to 150
300
2500
32
Units
V
A
A
A
°C
°C
°C
V
W
Thermal Resistance
Symbol
R_θJA
R_θJC
Resistance from:
Junction to ambient
Junction to case
Conditions
TO-220
TO-220
Rating
62
3.85
Units
°C/W
°C/W
www.powerint.com
January 2011