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| CM1000DXL-24S Datasheet, PDF (7/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1000DXL-24S
Dual IGBT NX-Series Module
1000 Amperes/1200 Volts
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
104
103
td(off)
tf
103
101
10-1
tr
td(on)
100
VCC = 600V
VGE = ±15V
IC = 1000A
Tj = 150°C
Inductive Load
102
101
102
EXTERNAL GATE RESISTANCE, RG, (Ω)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
101
101
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Irr
trr
102
EMITTER CURRENT, IE, (AMPERES)
103
102
101
101
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Irr
trr
102
EMITTER CURRENT, IE, (AMPERES)
103
GATE CHARGE VS. VGE
20
IC = 1000A
VCC = 600V
16
12
8
4
0
0 500 1000 1500 2000 2500 3000 3500
GATE CHARGE, QG, (nC)
05/13 Rev. 6
7
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