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| PM450DV1A120 Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – FLAT-BASE TYPE INSULATED PACKAGE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
PM450DV1A120
Intellimod⢠Module
Single Phase IGBT Inverter Output
450 Amperes/1200 Volts
CIRCUIT CURRENT VS.
FREQUENCY CURRENT
(TYPICAL)
120
VD = 15V
100
Tj = 25°C
Tj = 125°C
80
60
40
20
0
0
5
10 15 20 25
FREQUENCY CURRENT, fc, (kHz)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10010-3
10-2
10-1
100
101
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDANCY
(TYPICAL)
20
VD = 15V
UVt
16
UVr
12
8
4
0
-50
0
50
100
JUNCTION TEMPERATURE, Tj, (°C)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10010-3
10-2
10-1
100
150
101
SHORT CIRCUIT TRIP LEVEL
VS. JUNCTION TEMPERATURE
(TYPICAL)
2.0
VD = 15V
1.6
1.2
0.8
0.4
0
-50
0
50
100
JUNCTION TEMPERATURE, Tj, (°C)
150
10-1
10-1
10-2
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) = 0.056 K/W
10-3
10-5
TIME, (s)
10-4
10-3
10-2
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) = 0.079 K/W
10-3
10-5
TIME, (s)
10-4
10-3
6
08/12 Rev. 1
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