CM75MXA-24S_13 Datasheet, PDF (6/15 Pages) Powerex Power Semiconductors – NX-Series CIB Module 75 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified (continued)
Converter Part ConvDi
Characteristics
Repetitive Peak Reverse Current
Forward Voltage
Symbol
I_RRM
V_F
(Terminal)
Test Conditions
V_R = V_RRM, T_j = 150°C
I_F = 75A^*6
Min.
Typ.
Max. Units
—
—
20
mA
—
1.2
1.6
Volts
NTC Thermistor Part
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
R₂₅
∆R/R
B_(25/50)
P₂₅
Test Conditions
T_C = 25°C^*4
T_C = 100°C^*4, R₁₀₀ = 493Ω
Approximate by Equation^*7
T_C = 25°C^*4
Min.
Typ.
Max. Units
4.85 5.00 5.15
kΩ
-7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case^*4
Thermal Resistance, Junction to Case^*4
Thermal Resistance, Junction to Case^*4
Thermal Resistance, Junction to Case^*4
Thermal Resistance, Junction to Case^*4
Contact Thermal Resistance,
Case to Heatsink^*4
R_th(j-c)Q
R_th(j-c)D
R_th(j-c)Q
R_th(j-c)D
R_th(j-c)D
R_th(c-f)
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7
B_(25/50) = In(RR₅₂₀₅)/(T₂¹₅
1
– _T50
)
R₂₅; Resistance at Absolute Temperature T₂₅ [K]; T₂₅ = 25 [°C] + 273.15 = 298.15 [K]
R₅₀; Resistance at Absolute Temperature T₅₀ [K]; T₅₀ = 50 [°C] + 273.15 = 323.15 [K]
*8 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Per Inverter IGBT
Per Inverter FWDi
Per Brake IGBT
Per Brake ClampDi
Per Converter ConvDi
Thermal Grease Applied,
Per 1 Module^*8
—
—
0.25
K/W
—
—
0.40
K/W
—
—
0.35
K/W
—
—
0.63
K/W
—
—
0.24
K/W
—
15
—
K/kW
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
15.2
18.1
54
55
Tr
Br
Di
Br
31.2
56
57
32.6
58
59
CR CR CR
RN SN TN
47.0
60
61
48.0
CR CR CR
RP SP TP
Di
UN
Tr
UN
Tr Di
UP UP
Di
VN
Tr
30
WN
29
Tr Di
Th 28
VN WN
27
Tr
VP
Di
Di
VP
Tr
WP
WP
26
25
24
23
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
0
17.2
19.4
24.6
25.6
35.9
42.5
46.2
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
DiBr: Clamp Di
Th: NTC Thermistor
Di*P / Di*N (* = U/V/W): FWDi
CR*P / CR*N (* = R/S/T): Conv Di
6
03/13 Rev. 3