CM150TX-24S Datasheet, PDF (6/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM150TX-24S
Six IGBT NX-Series Module
150 Amperes/1200 Volts
CAPACITANCE VS.
(TYPICAL)
VCE
10² _{VGE = 0V}
10¹
C_ies
10⁰
10^-1
C_oes
C_res
10^-2
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
t_d(on)
t_d(off)
t_f
10²
t_r
10¹
10¹
V_CC = 600V
V_GE = ±15V
R_G = 0Ω
T_j = 150°C
Inductive Load
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
t_d(on)
t_d(off)
t_f
10²
t_r
10¹
10¹
V_CC = 600V
V_GE = ±15V
R_G = 0Ω
T_j = 125°C
Inductive Load
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
10³
t_d(off)
t_d(on)
t_r
t_f
10²
10¹
10⁰
V_CC = 600V
V_GE = ±15V
I_C = 150A
T_j = 125°C
Inductive Load
10¹
GATE RESISTANCE, R_G, (Ω)
10²
6
03/13 Rev. 4