 English |
|
|
|
|
|
|
|
| BCR12CM Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | |||
| |||
| ◁ |
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
BCR12CM
Triac
12 Amperes/400-600 Volts
GATE TRIGGER VOLTAGE
VS. JUNCTION TEMPERATURE
(TYPICAL)
103
HOLDING CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
103
BREAKOVER VOLTAGE
VS. JUNCTION TEMPERATURE
(TYPICAL)
160
120
102
102
80
101
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
(TYPICAL)
160
Tj = 125°C
I QUADRANT
III QUADRANT
120
80
#2
40
#1
0
101
102
103
104
RATE OF RISE OF OFF-STATE VOLTAGE, dv/dt, (V/â®s)
GATE TRIGGER CURRENT
VS. GATE CURRENT PULSE WIDTH
(TYPICAL)
103
102
Tj = 25°C
IFGT I
IRGT I
IRGT III
101
100
101
GATE CURRENT PULSE WIDTH, tw, (â®s)
102
101
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
REPETITIVE PEAK OFF-STATE CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
105
104
103
102
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6â
6â
A
A
6V
RG 6V
RG
V
V
TEST PROCEDURE I
TEST PROCEDURE II
6â
6V
A
RG
V
TEST PROCEDURE III
40
0
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
COMMUTATION CHARACTERISTICS
(TYPICAL)
103
Tj = 125oC
IT = 4A
ⶠ= 500â®s
VD = 200V
102 f = 3Hz
VOLTAGE WAVEFORM
t
(dv/dt)c
VD
CURRENT WAVEFORM
MINIMUM
CHARAC-
TERISTICS
VALUE
101
IT
â¶
(di/dt)c
t
III QUADRANT
I QUADRANT
100
100
101
102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT, (A/ms)
103
T-62
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese