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| BCR10PM Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
BCR10PM
Isolated Triac
10 Amperes/400-600 Volts
GATE TRIGGER CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
103
GATE TRIGGER VOLTAGE
VS. JUNCTION TEMPERATURE
(TYPICAL)
103
LATCHING CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
103
102
101
IFGT I
IRGT I
IRGT III
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
BREAKOVER VOLTAGE
VS. JUNCTION TEMPERATURE
(TYPICAL)
160
120
80
40
0
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
COMMUTATION CHARACTERISTICS
(TYPICAL)
102
MINIMUM
CHARAC-
TERISTICS
VALUE
101
Tj = 125oC
IT = 4A
ⶠ= 500â®s
VD = 200V
f = 3Hz
III QUADRANT
I QUADRANT
100
VOLTAGE WAVEFORM CURRENT WAVEFORM
t
IT
(di/dt)c
10-1
(dv/dt)c
100
VD
101
â¶
t
102
103
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT, (A/ms)
102
101
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
(TYPICAL)
160
Tj = 125°C
I QUADRANT
III QUADRANT
120
80
40
0
101
102
103
104
RATE OF RISE OF OFF-STATE VOLTAGE, dv/dt, (V/â®s)
GATE TRIGGER CURRENT
VS. GATE CURRENT PULSE WIDTH
(TYPICAL)
103
102
101
100
IFGT I
IRGT I
IRGT III
101
GATE CURRENT PULSE WIDTH, tw, (â®s)
102
DISTRIBUTION
102
TYPICAL EXAMPLE
101
100
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
REPETITIVE PEAK OFF-STATE CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
105
104
103
102
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6â
6â
A
A
6V
RG 6V
RG
V
V
TEST PROCEDURE I
TEST PROCEDURE II
6â
6V
A
RG
V
TEST PROCEDURE III
T-56
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