QID1210005 Datasheet, PDF (4/7 Pages) Powerex Power Semiconductors – Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts

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QID1210005
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
200
T_j = 25°C
V_GE = 20V
14
15
13
150
12
TRANSFER CHARACTERISTICS
(TYPICAL)
200
V_GE = 10V
T_j = 25°C
150
T_j = 125°C
100
11
10
50
9
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
9
8
V_GE = 15V
T_j = 25°C
7
T_j = 125°C
6
5
4
3
2
1
0
0
50
100
150 200
COLLECTOR-CURRENT, I_C, (AMPERES)
100
50
0
0
5
10
15
20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 200A
6
I_C = 100A
4
I_C = 40A
2
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
4
12/12 Rev. 2