PM100RL1A120 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

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PM100RL1A120
Intellimod™ L1-Series
Three Phase IGBT Inverter + Brake
100 Amperes/1200 Volts
Electrical and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Characteristics, T_j = 25°C unless otherwise specified
Characteristic
Junction to Case Thermal Resistance
Inverter Part
Junction to Case Thermal Resistance
Brake Part
Contact Thermal Resistance
Symbol
R_th(j-c)Q
R_{th(j-c)D  }
R_th(j-c)Q
R_{th(j-c)D  }
R_th(c-f)
Condition
Min.
IGBT (Per 1 Element) (Note 1)
—
FWDi (Per 1 Element) (Note 1)
—
IGBT (Note 1)
—
FWDi (Note 1)
—
Case to Fin Per Module,
—
Thermal Grease Applied (Note 1)
Recommended Conditions for Use
Characteristic
Symbol
Condition
Supply Voltage
V_CC
Applied across P-N Terminals
Control Supply Voltage**
V_D
Applied between V_UP1-V_UPC,
V_VP1-V_VPC, V_WP1-V_WPC, V_N1-V_NC
Input ON Voltage
V_CIN(on)
Applied between U_P-V_UPC,
Input OFF Voltage
V_CIN(off) V_P-V_VPC, W_P-V_WPC, U_N- V_N- W_N-Br-V_NC
PWM Input Frequency
f_PWM
—
Arm Shoot-through Blocking Time
t_DEAD
Input Signal
* If you use this value, R_th(f-a) should be measured just under the chips.
** With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak.
Typ. Max. Units
Typ. Max. Units
—
0.19* °C/Watt
—
0.31* °C/Watt
—
0.28* °C/Watt
—
0.48* °C/Watt
—
0.023 °C/Watt
Value
≤800
15.0 ±1.5
Units
Volts
Volts
≤0.8 Volts
≥9.0 Volts
≤20
kHz
≥2.5
µs
4
11/12 Rev. 2